Deposition of copper indium diselenide films by low-cost techniques: Final subcontractor report, 15 November 1983 to 14 September 1985

Technical Report · Sun Feb 01 04:00:00 EST 1987

DOI:https://doi.org/10.2172/6889492· OSTI ID:6889492

This is the final technical report of a research program on copper indium diselenide films. The objectives of this program were to prepare device-quality, thin-film, polycrystalline CuInSe/sub 2/ by low-cost techniques and to produce heterojunction solar cells 1 cm/sup 2/ in area with an AM 1 efficiency of 8% or higher. In this work, three approaches were used to deposit p-type CuInSe/sub 2/ films: close-spaced chemical vapor transport (CSCVT), thermal reduction of Cu and In compounds followed by selenization, and electroplating of Cu and In films followed by selenization. The important process parameters for: (1) depositing CuInSe/sub 2/ films by the CSCVT technique; (2) depositing Cu-In films by chemical reduction and electroplating; and (3) forming CuInSe/sub 2/ films by the selenization of Cu-In films were investigated. Many p-CuInSe/sub 2/ films were deposited on conducting and insulating substrates, and their properties characterized. Heterojunction solar cells were fabricated from p-CuInSe/sub 2/ films prepared by the three techniques, and their photovoltaic characteristics evaluated. The procedures and results are summarized.

• Research Organization: Poly Solar, Inc., Garland, TX (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6889492
• Report Number(s): SERI/STR-211-3123; ON: DE87001151
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
DEPOSITION
DIRECT ENERGY CONVERTERS
EQUIPMENT
FABRICATION
FILMS
INDIUM COMPOUNDS
INDIUM SELENIDES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RESEARCH PROGRAMS
SELENIDES
SELENIUM COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS
TRANSITION ELEMENT COMPOUNDS