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Feasibility of using copper indium disulfide for high-efficiency, thin-film solar cells: Final subcontract report, 1 February 1985-30 September 1986

Technical Report ·
DOI:https://doi.org/10.2172/6429968· OSTI ID:6429968
This research investigated the deposition of CuInS/sub 2/ films to determine the feasibility of using CuInS/sub 2/ for high-efficiency, thin-film solar cells. Two techniques were investigated for depositing p-CuInS/sub 2/ films on foreign substrates: (1) the close-spaced chemical vapor transport (CSCVT) technique; and (2) the deposition of Cu-In films by the thermal reduction of Cu and In compounds or by electro-deposition, followed by sulfurization. The photoresponse of CSCVT CuInS/sub 2/ films was poor, possibly due to stoichiometry, defects, or impurities. The deposition of Cu-In alloy films on W/Al/sub 2/O/sub 3/ and Mo/glass substrates was carried out by thermal reduction of a mixture of Cu(NO/sub 3/)/sub 2/ and In(NO/sub 3/)/sub 2/. However, relatively high temperatures were required, due to the stability of In/sub 2/O/sub 3/. The photovoltaic characteristics of CuInS/sub 2/ films prepared from electroplated Cu-In were similar to those from CSCVT; the highest open-circuit voltage and short-circuit current density were 0.35 V and 3 mA/Cm/sup 2/. The photoresponse of CuInS/sub 2/ films from chemically deposited Cu-In alloy are considerably inferior.
Research Organization:
Poly Solar, Inc., Garland, TX (USA); Solar Energy Research Inst., Golden, CO (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6429968
Report Number(s):
SERI/STR-211-3127; ON: DE87001168
Country of Publication:
United States
Language:
English