Laser annealing of ion-implanted semiconductors

Journal Article · Fri May 04 04:00:00 EDT 1979 · Science; (United States)

DOI:https://doi.org/10.1126/science.204.4392.461· OSTI ID:5311528

White, C W; Narayan, J; Young, R T

The physical and electrical properties of ion-implanted silicon annealed with high-powered laser radiation are described. Particular emphasis is placed on the comparison of materials properties that can be achieved with laser annealing to those which can be achieved by conventional thermal annealing. Applications of these techniques to the fabrication of high-efficiency solar cells, and potential applications of this new technique to other materials areas are discussed.

• Research Organization: Oak Ridge National Lab., TN
• OSTI ID: 5311528
• Journal Information: Science; (United States), Journal Name: Science; (United States) Vol. 204:4392; ISSN SCIEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EQUIPMENT
HEAT TREATMENTS
ION IMPLANTATION
LASER RADIATION
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT