Trapping properties of cadmium vacancies in Cd{sub 1{minus}x}Zn{sub x}Te

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.6945· OSTI ID:530954

Szeles, C; Shan, Y Y; Lynn, K G; Moodenbaugh, A R ^[1]; Eissler, E E ^[2]

---

1. Brookhaven National Laboratory, Upton, New York 11973 (United States)
2. eV Products Division of II-VI Incorporated, Saxonburg, Pennsylvania 16056 (United States)

The trapping and thermal emission of holes were studied from a deep acceptor level created during thermal annealing of a Cd{sub 1{minus}x}Zn{sub x}Te (x=0.12) crystal grown by the high-pressure Bridgman (HPB) technique using thermoelectric-effect spectroscopy and thermally stimulated current experiments. The deep level, which is usually absent in as-grown HPB Cd{sub 1{minus}x}Zn{sub x}Te crystals, is assigned to the 2{minus}/{minus} acceptor level of Cd (Zn) vacancies. The thermal ionization energy of the level is E{sub th}=(0.43{plus_minus}0.01) eV, and the trapping cross section of holes was found to be {sigma}=(2.0{plus_minus}0.2){times}10{sup {minus}16} cm{sup {minus}2}. {copyright} {ital 1997} {ital The American Physical Society}

• Research Organization: Brookhaven National Laboratory
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 530954
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 11 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BINDING ENERGY
BRIDGMAN METHOD
CADMIUM TELLURIDES
CRYSTAL GROWTH
ELECTRONIC STRUCTURE
HOLES
IMPURITIES
JAHN-TELLER EFFECT
THERMOELECTRIC PROPERTIES
THERMOELECTRICITY
TRAPS
VACANCIES
ZINC TELLURIDES