Lattice relaxation of DX -like donors in Zn sub x Cd sub 1 minus x Te
Journal Article
·
· Physical Review (Section) B: Condensed Matter; (USA)
- Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (US)
- Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
- Xerox Corporation, Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
The configuration-coordinate diagram was constructed for deep relaxed In impurities in Zn{sub {ital x}}Cd{sub 1{minus}{ital x}}Te. On the basis of the Hall effect, deep-level transient spectroscopy, photoionization, and photoluminescence measurements it was shown that In donors in Zn{sub {ital x}}Cd{sub 1{minus}{ital x}}Te possess analogous properties to the so-called {ital DX} center in Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As. The absence of paramagnetic resonance from In donors suggests that In atoms form a mixture of In{sup +} and In{sup 3+} ions, in equal numbers. A persistent photo-EPR signal from mobile photoelectrons was observed after illumination at {ital g}=1.316 and could be thermally annealed. A strong broad, donor-acceptor-pair luminescence was found, with periodically spaced phonon lines at high excitation powers.
- OSTI ID:
- 5374761
- Journal Information:
- Physical Review (Section) B: Condensed Matter; (USA), Journal Name: Physical Review (Section) B: Condensed Matter; (USA) Vol. 39:9; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
HALL EFFECT
IMPURITIES
INDIUM ADDITIONS
INDIUM ALLOYS
LUMINESCENCE
PHOTOCONDUCTIVITY
PHOTOELECTRON SPECTROSCOPY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
SPECTROSCOPY
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
ZINC TELLURIDES
360603* -- Materials-- Properties
ALLOYS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
HALL EFFECT
IMPURITIES
INDIUM ADDITIONS
INDIUM ALLOYS
LUMINESCENCE
PHOTOCONDUCTIVITY
PHOTOELECTRON SPECTROSCOPY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
SPECTROSCOPY
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
ZINC TELLURIDES