A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods

Gul, R.; Roy, U. N.; Camarda, G. S.; Hossain, A.; Yang, G.; Vanier, P.; Varley, J.; Lordi, V.; James, R. B.

doi:10.1063/1.4979012

A Comparison of Point Defects in Cd_1-xZn_xTe_1-ySe_y Crystals Grown by Bridgman and Traveling Heater Methods

Journal Article · Tue Mar 28 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4979012· OSTI ID:1367976

Gul, R. ^[1]; Roy, U. N. ^[2]; Camarda, G. S. ^[2]; Hossain, A. ^[2]; Yang, G. ^[2]; Vanier, P. ^[2]; Varley, J. ^[3]; Lordi, V. ^[3]; James, R. B. ^[4]

Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)

In this study, the properties of point defects in Cd_1–xZn_xTe_1–ySe_y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V_Cd^– concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V_Cd^– and two additional traps (attributed to Te_i^– and Te_Cd⁺⁺ appearing at around E_v + 0.26 eV and E_c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Savannah River Site (SRS), Aiken, SC (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC09-08SR22470; AC52-07NA27344

OSTI ID:: 1367976

Alternate ID(s):: OSTI ID: 1406493
OSTI ID: 1408812

Report Number(s):: LLNL-JRNL--718467; SRNL-STI--2017-00152

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 121; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

Macroscopic effects and microscopic origins of gamma-ray irradiation on In-doped CdZnTe crystal Nan, Ruihua; Li, Tao; Jian, Zengyun Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 23 https://doi.org/10.1007/s10854-018-0180-0	journal	October 2018
Influence of deep levels on the electrical transport properties of CdZnTeSe detectors Rejhon, M.; Franc, J.; Dědič, V. Journal of Applied Physics, Vol. 124, Issue 23 https://doi.org/10.1063/1.5063850	journal	December 2018

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Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CdZnTeSe
carrier trapping
deep levels
iDLTS
point defects
radiation detectors