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Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0159519· OSTI ID:1997254
Incorporation of Se into Cd1–xZnxTe (CZT) to form the quaternary compound semiconductor Cd1–xZnxTe1–ySey (CZTS) has proven to be an effective solution for compensating the major flaws associated with CZT, including poor homogeneity and high concentrations of electronically active deep levels that limit the performance of CZT detectors. In order to investigate how deep levels are affected by the Se concentration in CZTS, we performed photoinduced current transient spectroscopy (PICTS) measurements on CZTS crystals grown by the traveling heater method (THM) with 10% atomic Zn and varying atomic percentage of Se from 1.5% to 7.0%. The PICTS scans for up to 4% Se showed an exponential reduction in the capture cross section of deep levels associated with Te secondary phases in conjunction with an increase in a deep level positioned near the mid-gap, which initially increases the electron trapping time before degrading again at higher Se concentrations. The PICTS peaks present in 7% Se were anomalous relative to the other crystals and are expected to originate from transition metal impurities found in the lower-purity CdSe precursor material.
Research Organization:
Savannah River National Laboratory (SRNL), Aiken, SC (United States); Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Organization:
USDOE Office of Environmental Management (EM)
Grant/Contract Number:
89303321CEM000080
OSTI ID:
1997254
Report Number(s):
SRNL-STI-2023-00235
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 123; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (46)

Dislocation cell structures in melt-grown semiconductor compound crystals journal January 2005
Point Defects in CdZnTe Crystals Grown by Different Techniques journal February 2011
Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements journal November 2011
The Effect of Indium Doping on Deep Level Defects and Electrical Properties of CdZnTe journal October 2019
Advances in clinical molecular imaging instrumentation journal January 2018
Fundamental studies on Bridgman growth of CdTe journal January 1994
Defects in CdTe and Cd1−xZnxTe
  • Hofmann, D. M.; Stadler, W.; Christmann, P.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 380, Issue 1-2 https://doi.org/10.1016/S0168-9002(96)00287-2
journal October 1996
Cadmium zinc telluride and its use as a nuclear radiation detector material journal April 2001
X-ray polarimetry with the Polarization Spectroscopic Telescope Array (PolSTAR) journal February 2016
Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation journal January 2008
Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride journal June 2011
Point defects in Cd(Zn)Te and TlBr: Theory journal September 2013
X-ray topographic study of Bridgman-grown CdZnTeSe journal September 2020
Vertical Gradient Freeze Growth of two inches Cd1−xZnxTe1−ySey ingots with different Se content journal November 2021
Vertical gradient freeze growth of detector grade CdZnTeSe single crystals journal October 2022
Feasibility study of CdZnTe and CdZnTeSe based high energy X-ray detector using linear accelerator journal August 2023
High-resolution X-ray mapping of CdZnTe detectors
  • Carini, G. A.; Bolotnikov, A. E.; Camarda, G. S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 579, Issue 1 https://doi.org/10.1016/j.nima.2007.04.078
journal August 2007
Comparison of In doped and In, Pb co-doped Cd0.9Zn0.1Te
  • Zaman, Yasir; Jie, Wanqi; Wang, Tao
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 790 https://doi.org/10.1016/j.nima.2015.04.014
journal August 2015
Enhanced hole mobility-lifetime product in selenium-added CdTe compounds
  • Kim, Kihyun; Kim, Younghak; Franc, Jan
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 1053 https://doi.org/10.1016/j.nima.2023.168363
journal August 2023
Point defect engineering in thin-film solar cells journal June 2018
Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects journal May 2019
Self-compensation in chlorine-doped CdTe journal June 2019
Impact of selenium addition to the cadmium-zinc-telluride matrix for producing high energy resolution X-and gamma-ray detectors journal May 2021
Tellurium antisites in CdZnTe journal October 2001
Characterization of large cadmium zinc telluride crystals grown by traveling heater method journal January 2008
Photoinduced current transient spectroscopy in high-resistivity bulk materials: Instrumentation and methodology journal October 1988
Modified compensation model of CdTe journal December 1998
High compositional homogeneity of CdTe x Se 1−x crystals grown by the Bridgman method journal February 2015
An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers journal March 2017
A comparison of point defects in Cd 1−x Zn x Te 1−y Se y crystals grown by Bridgman and traveling heater methods journal March 2017
Room temperature semiconductor detectors for nuclear security journal July 2019
Characterization of large-volume Frisch grid detector fabricated from as-grown CdZnTeSe journal December 2019
Optimization of selenium in CdZnTeSe quaternary compound for radiation detector applications journal April 2021
Evaluation of crystalline quality of traveling heater method (THM) grown Cd0.9Zn0.1Te0.98Se0.02 crystals journal June 2022
THE NUCLEAR SPECTROSCOPIC TELESCOPE ARRAY ( NuSTAR ) HIGH-ENERGY X-RAY MISSION journal May 2013
High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies journal December 2015
Multi-contrast CT imaging using a high energy resolution CdTe detector and a CZT photon-counting detector journal January 2022
Polarization Studies of CdZnTe Detectors Using Synchrotron X-Ray Radiation journal December 2008
Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects journal April 2010
Fabrication and Characterization of ${\rm Cd}_{0.9}{\rm Zn}_{0.1}{\rm Te}$ Schottky Diodes for High Resolution Nuclear Radiation Detectors journal August 2012
Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector journal August 2019
Anomalous Te Inclusion Size and Distribution in CdZnTeSe journal November 2019
Growth of Cd0.9Zn0.1Te1-ySey Single Crystals for Room Temperature Gamma-Ray Detection journal January 2021
Quaternary Semiconductor Cd1−xZnxTe1−ySey for High-Resolution, Room-Temperature Gamma-Ray Detection journal July 2021
Spectral Dependence of the Photoplastic Effect in CdZnTe and CdZnTeSe journal March 2021
Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications journal May 2009

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