Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials
- Savannah River National Laboratory (SRNL), Aiken, SC (United States)
- University of South Carolina, Columbia, SC (United States)
Incorporation of Se into Cd1–xZnxTe (CZT) to form the quaternary compound semiconductor Cd1–xZnxTe1–ySey (CZTS) has proven to be an effective solution for compensating the major flaws associated with CZT, including poor homogeneity and high concentrations of electronically active deep levels that limit the performance of CZT detectors. In order to investigate how deep levels are affected by the Se concentration in CZTS, we performed photoinduced current transient spectroscopy (PICTS) measurements on CZTS crystals grown by the traveling heater method (THM) with 10% atomic Zn and varying atomic percentage of Se from 1.5% to 7.0%. The PICTS scans for up to 4% Se showed an exponential reduction in the capture cross section of deep levels associated with Te secondary phases in conjunction with an increase in a deep level positioned near the mid-gap, which initially increases the electron trapping time before degrading again at higher Se concentrations. The PICTS peaks present in 7% Se were anomalous relative to the other crystals and are expected to originate from transition metal impurities found in the lower-purity CdSe precursor material.
- Research Organization:
- Savannah River National Laboratory (SRNL), Aiken, SC (United States); Savannah River Site (SRS), Aiken, SC (United States)
- Sponsoring Organization:
- USDOE Office of Environmental Management (EM)
- Grant/Contract Number:
- 89303321CEM000080
- OSTI ID:
- 1997254
- Report Number(s):
- SRNL-STI-2023-00235
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 123; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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