Charge-Transport Properties of As-Grown Cd1-xZnxTe1-ySey by the Traveling Heater Method

Roy, Utpal N.; Camarda, G. S.; Cui, Y.; Gul, R.; Yang, G.; James, R. B.

doi:10.1063/1.5064373

Charge-Transport Properties of As-Grown Cd_1-xZn_xTe_1-ySe_y by the Traveling Heater Method

Journal Article · Fri Dec 28 00:00:00 EST 2018 · AIP Advances

DOI:https://doi.org/10.1063/1.5064373· OSTI ID:1485437

Roy, Utpal N. ^[1]; Camarda, G. S. ^[1]; Cui, Y. ^[1]; Gul, R. ^[1]; Yang, G. ^[1]; James, R. B. ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)

In this article, we report on the charge-transport characteristics of a new quaternary material Cd_1-xZn_xTe_1-ySe_y (CZTS) grown by the Traveling Heater Method (THM). The as-grown CZTS material was found to possess fewer Te inclusions than CZT. Moreover, high resistivity of ~1-2x10¹⁰ ohm-cm was achieved, meeting the requirements of most gamma-ray detector applications. The mobility-lifetime product for electrons [(µτ)_e] was measured to be ~4x10^-3 cm²/V. The energy resolution for the quasi-hemispherical detector fabricated from the as-grown CZTS ingot obtained was ~2.8% (FWHM) at 662 keV.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE; USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)

Grant/Contract Number:: SC0012704

OSTI ID:: 1485437

Alternate ID(s):: OSTI ID: 1512418

Report Number(s):: BNL--209676-2018-JAAM; SRNL-STI--2018-00573

Journal Information:: AIP Advances, Journal Name: AIP Advances Journal Issue: 12 Vol. 8; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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