Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.365790· OSTI ID:530033

Gill, K ^[1]; Hall, G; MacEvoy, B ^[2]

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1. PPE Division, CERN, CH-1211, Geneve 23 (Switzerland)
2. Blackett Laboratory, Imperial College, London SW7 2AZ (United Kingdom)

High resistivity silicon particle detectors will be used extensively in experiments at the future CERN Large Hadron Collider. The detectors will be exposed to particle fluences equivalent to {approximately}10{sup 14} (1 MeV neutrons)/cm{sup 2}, causing significant atomic displacement damage. A model has been developed to estimate the evolution of defect concentrations and the electrical behavior of irradiated silicon detectors using Shockley{endash}Read{endash}Hall (SRH) semiconductor statistics. The observed increases in leakage current and doping concentration changes can be described well after {sup 60}Co-gamma irradiation but less well after fast neutron irradiation. A possible non-SRH mechanism is considered, based on the hypothesis of charge transfer between clustered divacancy defects in neutron damaged silicon detectors. This leads to a large enhancement over the SRH prediction for V{sub 2} acceptor state occupancy and carrier generation rate which may resolve the discrepancy between the model and neutron damage data. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 530033
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CARRIER DENSITY
CARRIER MOBILITY
CERN LHC
CRYSTAL DEFECTS
DAMAGE
LEAKAGE CURRENT
NEUTRON BEAMS
RADIATION DETECTORS
RADIATION EFFECTS
SILICON
VACANCIES