A new model for generation-recombination in silicon depletion regions after neutron irradiation

Journal Article · Sun Dec 01 04:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556840· OSTI ID:443026

Watts, S J; Matheson, J; Hopkins-Bond, I H; Holmes-Siedle, A; Mohammadzadeh, A ^[1]; Pace, R ^[2]

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1. Brunel Univ., Uxbridge (United Kingdom)
2. Univ. of South Australia (Australia). School of Applied Physics

Deep level transient spectroscopy has been used to investigate defects in high resistivity silicon diodes after neutron irradiation. Three defects have been correlated with the leakage current. The leakage current in the diodes is found to be a factor of 50 to 600 greater than expected from standard Shockley-Read-Hall (SRH) theory for the observed defect concentrations. The results can be explained by an enhancement factor due to intercenter transfer of charge between defects in close proximity to each other. It is proposed that a possible mechanism for this process is rapid, direct transfer between a deep donor state and a deep acceptor state. An unidentified defect is observed at E{sub C} {minus}0.45 {+-} 0.02 eV which anneals at {approximately}70 C. This defect is correlated to excess leakage current in both diodes and charge coupled devices.

• OSTI ID: 443026
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CRYSTAL DEFECTS
DEPLETION LAYER
LEAKAGE CURRENT
MATHEMATICAL MODELS
NEUTRONS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DIODES
SILICON