Ion beam annealing of Si co-implanted with Ga and As

Conference · Wed Nov 01 04:00:00 EST 1989

DOI:https://doi.org/10.1557/PROC-157-143· OSTI ID:5299541

Withrow, S P; Holland, O W; Pennycook, S J; Pankove, J; Mascarenhas, A ^[1]

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1. Oak Ridge National Lab., TN (USA)

Ion beam annealing of amorphous Si(100) layers formed by co-implantation of overlapping Ga and As distributions is studied. Annealing was done using 750 keV Si{sup +} ions with the Si substrate held at 300{degrees}C. The samples were characterized using 2.0 and 5.0 MeV He{sup +} backscattering/channeling as well as by transmission electron microscopy (TEM). Crystallization of the amorphous Si layer occurs during irradiation via solid-phase-epitaxial growth without impurity precipitation or segregation. Both the Ga and As are nearly substitutional in the Si lattice, even at concentrations in excess of 7 at. % for each species. These results are attributed to compensation effects, most likely through ion pairing of the electrically-attractive dopants. 11 refs., 3 figs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5299541
• Report Number(s): CONF-891119-41; ON: DE90004297
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANNEALING
ARSENIC
BEAMS
CRYSTALLIZATION
ELEMENTS
GALLIUM
HEAT TREATMENTS
ION BEAMS
ION IMPLANTATION
METALS
PHASE TRANSFORMATIONS
SEMIMETALS
SILICON