Ion beam annealing of Ga-implanted Si

Conference · Sun Jan 01 04:00:00 EST 1989

OSTI ID:5892255

Withrow, S P; Holland, O W; Pennycook, S J

Rutherford backscattering/ion channeling and transmission electron microscopy have been used to investigate regrowth effects which occur during high-energy ion bombardment of amorphous silicon layers implanted with 1 /times/ 10/sup 16/ Ga/cm/sup 2/. At both 300 and 400/degree/C the Si lattice initially regrows epitaxially. However, at this high dopant level, Ga is segregated at the crystalline-amorphous interface and eventually disrupts epitaxy. Transmission electron microscopy had been used to characterize the lattice morphology and monitor movement of the Ga. The results are compared with thermal annealing effects in Ga-implanted Si samples. 15 refs., 4 figs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5892255
• Report Number(s): CONF-890579-1; ON: DE89016857
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101 -- Metals & Alloys-- Preparation & Fabrication
360102* -- Metals & Alloys-- Structure & Phase Studies
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BEAMS
CHANNELING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DOPED MATERIALS
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
GALLIUM
HEAT TREATMENTS
IMPURITIES
ION BEAMS
ION CHANNELING
ION IMPLANTATION
MATERIALS
METALS
MICROSCOPY
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY