Y sub 1 Ba sub 2 Cu sub 3 O sub 6+. delta. growth on thin Y-enhanced SiO sub 2 buffer layers on silicon

Journal Article · Sun Oct 27 23:00:00 EST 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106057· OSTI ID:5294971

Robin, T; Mesarwi, A; Wu, N J; Fan, W C; Espoir, L; Sega, R; Ignatiev, A ^[1]

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1. Texas Center for Superconductivity and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas (USA)

SiO{sub 2} buffer layers as thin as 2 nm have been developed for use in the growth of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 6+{delta}} thin films on silicon substrates. The SiO{sub 2} layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 6+{delta}} film growth on silicon with thin buffer layers has shown {ital c} orientation and {ital T}{sub {ital c}0}=78 K.

• OSTI ID: 5294971
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:18; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
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Cermets
& Refractories-- Preparation & Fabrication
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BARIUM COMPOUNDS
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CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
CRYSTAL GROWTH
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HIGH-TC SUPERCONDUCTORS
LAYERS
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
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