Growth and properties of a multilayer system based on Y sub 1 Ba sub 2 Cu sub 3 O sub x and amorphous Y-ZrO sub 2
Journal Article
·
· Journal of Applied Physics; (United States)
- Department of Physics, Chalmers University of Technology, S-412 96 Gothenburg (Sweden)
The growth of {ital c}-axis oriented Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub {ital x}} thin films on an amorphous buffer layer of Y-ZrO{sub 2}, deposited on sapphire substrates, was investigated. Both films were grown by a pulsed laser deposition technique. A strong correlation was observed between the properties of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub {ital x}} and the thickness of the buffer layer. A {ital T}{sub {ital c}} of 89 K was obtained for an optimal buffer layer thickness of 9 nm. A model that adequately describes the film growth process was developed. A multilayer system of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub {ital x}} and amorphous Y-ZrO{sub 2} was grown and a {ital T}{sub {ital c}} of 87 K for the upper {ital c}-axis oriented layer was measured.
- OSTI ID:
- 7202050
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:1; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
An In situ all-laser process for deposition of Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus. delta. film on stainless steel involving use of Y-ZrO sub 2 -Ag composite as a barrier layer
Y sub 1 Ba sub 2 Cu sub 3 O sub 6+. delta. growth on thin Y-enhanced SiO sub 2 buffer layers on silicon
Natural buffer layer in DyBa sub 2 Cu sub 3 O sub 7 minus x films grown on Si by molecular beam epitaxy
Journal Article
·
Mon Oct 07 00:00:00 EDT 1991
· Applied Physics Letters; (United States)
·
OSTI ID:5172818
Y sub 1 Ba sub 2 Cu sub 3 O sub 6+. delta. growth on thin Y-enhanced SiO sub 2 buffer layers on silicon
Journal Article
·
Sun Oct 27 23:00:00 EST 1991
· Applied Physics Letters; (United States)
·
OSTI ID:5294971
Natural buffer layer in DyBa sub 2 Cu sub 3 O sub 7 minus x films grown on Si by molecular beam epitaxy
Journal Article
·
Thu Nov 14 23:00:00 EST 1991
· Journal of Applied Physics; (United States)
·
OSTI ID:5097416
Related Subjects
36 MATERIALS SCIENCE
360207* -- Ceramics
Cermets
& Refractories-- Superconducting Properties-- (1992-)
ALKALINE EARTH METAL COMPOUNDS
AMORPHOUS STATE
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
FILMS
HIGH-TC SUPERCONDUCTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SUPERCONDUCTING FILMS
SUPERCONDUCTORS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE
YTTRIUM COMPOUNDS
YTTRIUM OXIDES
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES
360207* -- Ceramics
Cermets
& Refractories-- Superconducting Properties-- (1992-)
ALKALINE EARTH METAL COMPOUNDS
AMORPHOUS STATE
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
FILMS
HIGH-TC SUPERCONDUCTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SUPERCONDUCTING FILMS
SUPERCONDUCTORS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE
YTTRIUM COMPOUNDS
YTTRIUM OXIDES
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES