Natural buffer layer in DyBa sub 2 Cu sub 3 O sub 7 minus x films grown on Si by molecular beam epitaxy
- Center for the Science and Application of Superconductivity and School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota (USA)
Growth of a natural buffer layer has been observed for DyBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} films grown on Si substrates. The best DyBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-A thick, highly {ital c}-axis oriented, and had a resistive-transition onset at 90 K and zero resistance by 70 K. The natural buffer layer, which grew at the interface of the DyBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} film and the Si substrate, consisted of Si, Ba, and O. Transmission electron microscopy on this film revealed a 150-A amorphous layer, whereas Auger electron spectroscopy depth profiling showed 400 A of chemical interdiffusion.
- OSTI ID:
- 5097416
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:10; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
In situ single chamber laser processing of YBa sub 2 Cu sub 3 O sub 7 minus. delta. superconducting thin films on Si (100) with yttria-stabilized zirconia buffer layers
Growth of YBa sub 2 Cu sub 3 O sub 7 minus x thin films on Si with a CoSi sub 2 buffer layer
Related Subjects
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ALKALINE EARTH METAL COMPOUNDS
AMINES
AMMONIUM COMPOUNDS
AUGER ELECTRON SPECTROSCOPY
BARIUM COMPOUNDS
BARIUM OXIDES
BUFFERS
CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
DYSPROSIUM COMPOUNDS
DYSPROSIUM OXIDES
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
INTERFACES
MICROSCOPY
MOLECULAR BEAM EPITAXY
ORGANIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
QUATERNARY COMPOUNDS
RARE EARTH COMPOUNDS
SEMIMETALS
SILICON
SPECTROSCOPY
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE
TRANSMISSION ELECTRON MICROSCOPY