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Growth of YBa sub 2 Cu sub 3 O sub 7 minus x thin films on Si with a CoSi sub 2 buffer layer

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104655· OSTI ID:6362859
; ;  [1]; ;  [2]
  1. Los Alamos National Laboratory, Los Alamos, NM (USA)
  2. Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY (USA)
By using the pulsed laser deposition technique, high-temperature superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) films were grown on Si(001) with a 36 nm single-crystal {l angle}001{r angle} oriented CoSi{sub 2} buffer layer. The films, grown at a substrate temperature of {similar to}700 {degree}C, have a metallic resistive temperature dependence with zero resistance at 85 K. X-ray diffraction, scanning electron microscopy, and ion channeling studies show that the YBCO films are polycrystalline but are strongly {ital c}-axis oriented normal to the Si substrate. Diffusion at the interface between the YBCO film and silicide buffer layer was minimized. This is essential to the growth of high-temperature superconducting films on Si substrates.
OSTI ID:
6362859
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 58:4; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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