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Pulsed excimer laser deposition Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus x superconductor films on silicon with laser-deposited Y-ZrO sub 2 buffer layer

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104142· OSTI ID:6335524
; ;  [1]
  1. Centre for Advanced Studies in Materials Science and Solid State Physics, Department of Physics, University of Poona, Pune (India)
The pulsed excimer laser ablation method is used to deposit both the buffer layer of Y-stabilized ZrO{sub 2} and the overlayer of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} superconductor on (100) oriented single-crystal silicon. Process parameter optimization study is carried out and it is shown that a thin film of the superconductor (0.5--0.7 {mu}m) having a zero resistance temperature of 86 K can be obtained using a 0.3 {mu}m buffer layer deposited at substrate temperatures between 600 and 800 {degree}C.
OSTI ID:
6335524
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:17; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English