YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} films on off-axis Y--ZrO{sub 2} substrates using Y--ZrO{sub 2} or Y{sub 2}O{sub 3} barrier layers
- NASA Lewis Research Center, 21000 Brookpark Road, Cleveland, Ohio 44135 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Solid State Division, Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6024 (United States)
YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) and barrier layer films were deposited on single-crystal (Y{sub 2}O{sub 3}){sub 0.09}(ZrO{sub 2}){sub 0.91} substrates cut between 3.6 and 35.7{degree} off-axis from the (001) planes. The barrier layers were (Y{sub 2}O{sub 3}){sub 0.065}(Y--ZrO{sub 2}){sub 0.935}(Y--ZrO{sub 2}), Y{sub 2}O{sub 3}, or multilayered structures of Y--ZrO{sub 2} and Y{sub 2}O{sub 3}. X-ray diffraction showed that the Y--ZrO{sub 2} and Y{sub 2}O{sub 3} barrier layers generally grew epitaxially on the off-axis substrates, with the (001) barrier layer film planes being parallel to those of the substrate, and the {l_angle}100{r_angle} directions being parallel. YBCO films deposited on Y{sub 2}O{sub 3} barrier layers also showed epitaxy with the YBCO (001) planes being nearly parallel to the substrate (001) planes, even for miscuts up to 35.7{degree}. In contrast, the (001) planes of YBCO films deposited on Y--ZrO{sub 2} barrier layers were almost parallel to the substrate surface, not the (001) substrate planes. However, YBCO films on Y--ZrO{sub 2} films maintained particular in-plane epitaxial orientations with respect to the substrate. The YBCO full-width at half-maximum (FWHM) x-ray peaks were slightly narrower (0.8{degree}) on Y{sub 2}O{sub 3} barrier layers than on Y--ZrO{sub 2} layers (1.3{degree}). The electrical resistivity versus temperature behavior of the YBCO/Y{sub 2}O{sub 3} films were consistent with increased grain boundary scattering as the degree of substrate miscut increased, whereas YBCO/Y--ZrO{sub 2} films` resistivities showed less sensitivity to substrate miscut, consistent with the loss of epitaxy.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 44509
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 4 Vol. 10; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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