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SiO/sub 2/ and Si/sub 3/N/sub 4/ passivation layers on Y-Ba-Cu-O thin films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.343848· OSTI ID:6257917

High-/ital T//sub /ital c// Y-Ba-Cu-O superconductor thin films were passivatedwith thermally evaporated SiO/sub 2/ or rf magnetron sputtered Si/sub 3/N/sub 4/. Thermalevaporation of SiO/sub 2/ on the Y-Ba-Cu-O thin-film surface did not degrade thezero resistance temperature of Y-Ba-Cu-O films. A seriously lowered zeroresistance temperature of Y-Ba-Cu-O films was found if Si/sub 3/N/sub 4/ was sputteredonto the Y-Ba-Cu-O film surface. A one month exposure of the Y-Ba-Cu-O film tothe environmental air did not change the /ital T//sub /ital c// onset of thesuperconductor thin film but gave a slight decrease of /ital T//sub /ital c// zerowith SiO/sub 2/ as the surface passivation layer. High-frequency capacitance-voltagestudies were made on metal-insulator-superconductor to investigate the interfaceand surface properties of Ya-Ba-Cu-O thin films. The experimental data suggestedthat a very thin layer semiconductor phase Y-Ba-Cu-O was produced betweenY-Ba-Cu-O films and the insulator films during the deposition of the passivationfilm onto the Y-Ba-Cu-O surface.

Research Organization:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, 217C Bonner Hall, Amherst, New York 14260(US)
OSTI ID:
6257917
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 66:1; ISSN JAPIA
Country of Publication:
United States
Language:
English