Spatial distribution of Cu sputter ejected by very low energy ion bombardment

Journal Article · Fri Aug 01 04:00:00 EDT 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.365991· OSTI ID:527983

Doughty, C; Gorbatkin, S M; Berry, L A ^[1]

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1. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Filling of submicron width trenches with Cu from a highly ionized plasma is sensitive to both the directionality of the depositing flux and reflection and resputtering at the film surface. The spatial distributions of Cu atoms sputtered by He{sup +}, Ar{sup +}, and Xe{sup +} ions incident at 30{degree}, 45{degree} and 60{degree} and over an ion energy range of {approximately}55{endash}600 eV have been investigated. In all cases, the distribution is forward directed and cannot be described by a cosine distribution about the surface normal. Decreasing energy, increasing angles of incidence, and increasing ion mass yield more forward directed distributions. For {approximately}55 eV Ar{sup +} incident at 60{degree}, {approximately}85{percent} of the resputtered flux is in the forward direction. From these distributions, in a 50{percent} ionized physical vapor deposition system the depositing flux due to forward directed resputtering is estimated to be of the same order of magnitude as the neutral flux. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 527983
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ARGON IONS
COPPER
DISTRIBUTION FUNCTIONS
EV RANGE
HELIUM IONS
PHYSICAL VAPOR DEPOSITION
PLASMA
SPUTTERING
XENON IONS