skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Angular dependence of preferential sputtering and composition in aluminum--copper thin films

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.575930· OSTI ID:6266912

The copper concentration in aluminum--copper alloys can be altered by ion bombardment during film deposition. We have measured the sputtering yields of aluminum and copper in Al--Cu alloys as a function of the Cu concentration (5--13 at. %) and the angle of ion incidence (0--40/sup 0/ from normal). During deposition, the films were partially resputtered by 500-eV Ar/sup +/ ion bombardment from a Kaufman ion source. We found that the Cu sputtering yield decreases by up to a factor of 10 in the alloy, relative to elemental Cu. The Al sputtering yield remains close to the elemental value. The net effect is a strong preferential sputtering of Al relative to Cu, which enhances the Cu concentration in an ion bombarded film. The Al/Cu sputtering yield ratio for normal incidence ion bombardment ranges from 3 to 5 as a function of Cu concentration. This ratio decreases with increasing angle of incidence to as low as 2 for 40/sup 0/ incident ions. However, since a higher fraction of the film is resputtered from a sloping surface, a higher Cu concentration is found on a sloping surface relative to a flat surface. These results show that in multicomponent film deposition under ion bombardment, the film composition will vary as a function of the surface topography. We will also show how the level of argon left trapped in the films varies inversely with respect to the ion flux.

Research Organization:
IBM Watson Research Center, Yorktown Heights, New York 10598
OSTI ID:
6266912
Journal Information:
J. Vac. Sci. Technol., A; (United States), Vol. 7:3
Country of Publication:
United States
Language:
English