Alignment of thin films by glancing angle ion bombardment during deposition

Journal Article · Fri Nov 01 04:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95931· OSTI ID:5338455

Yu, L S; Harper, J M.E.; Cuomo, J J; Smith, D A

Glancing angle ion bombardment during thin-film deposition is shown to have a pronounced alignment effect on crystallographic orientation. Restricted fiber texture is achieved in Nb films deposited at room temperature onto amorphous silica substrates by Ar ion beam sputtering, with simultaneous bombardment by 200 eV Ar/sup +/ ions at 20/sup 0/ from glancing angle. The alignment direction corresponds to a channeling direction for the incident ions between (110) planes, for which a low sputtering yield is expected. The degree of alignment is measured as a function of ion/atom arrival rate ratio up to 1.3 Ar/sup +/ ions per Nb film atom, and is shown to increase monotonically with the fraction resputtered.

• Research Organization: IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
• OSTI ID: 5338455
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
640301 -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALIGNMENT
ARGON IONS
CHALCOGENIDES
CHARGED PARTICLES
COATINGS
COLLISIONS
CRYSTAL STRUCTURE
DEPOSITION
ELEMENTS
ION COLLISIONS
IONS
METALS
MINERALS
NIOBIUM
ORIENTATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SILICA
SILICON COMPOUNDS
SILICON OXIDES
SPUTTERING
SURFACE COATING
TEXTURE
TRANSITION ELEMENTS