Control of thin film orientation by glancing angle ion bombardment during growth

Journal Article · Thu May 01 04:00:00 EDT 1986 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.573902· OSTI ID:5635962

Yu, L S; Harper, J M.E.; Cuomo, J J; Smith, D A

Glancing angle ion bombardment during thin film deposition is shown to have a pronounced alignment effect on crystallographic orientation. Restricted fiber texture is achieved in Nb films deposited at room temperature onto amorphous silica substrates by Ar ion beam sputtering, with simultaneous bombardment by 200 eV Ar/sup +/ ions at 20/sup 0/ from glancing angle. The alignment direction corresponds to a channeling direction for the incident ions between (110) planes, for which a low sputtering yield is expected. The degree of alignment is measured as a function of ion/atom arrival rate ratio up to 1.3 Ar/sup +/ ions per Nb film atom, and is shown to increase monotonically with the fraction resputtered. Also, the fiber axis tilts slightly towards the incident ion beam direction, favoring the channeling direction.

• Research Organization: IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
• OSTI ID: 5635962
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 4:3; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101 -- Metals & Alloys-- Preparation & Fabrication
360102* -- Metals & Alloys-- Structure & Phase Studies
ARGON IONS
CHALCOGENIDES
CHANNELING
CHARGED PARTICLES
COATINGS
COLLISIONS
CRYSTAL STRUCTURE
DEPOSITION
ELEMENTS
FILMS
ION CHANNELING
ION COLLISIONS
IONS
METALS
MINERALS
NIOBIUM
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SILICA
SILICON COMPOUNDS
SILICON OXIDES
SPUTTERING
SURFACE COATING
TEXTURE
THIN FILMS
TRANSITION ELEMENTS