Effects of temperature on MOS radiation response
Conference
·
OSTI ID:527898
Effects of irradiation and annealing temperature on radiation-induced charge densities are explored for MOS transistors. Both interface- and border-trap density increase with increasing radiation temperature, while the net oxide-trap charge density decreases.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- Department of Defense, Washington, DC (United States); USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 527898
- Report Number(s):
- SAND--97-0602C; CONF-970934--1; ON: DE97003729
- Country of Publication:
- United States
- Language:
- English
Similar Records
The role of border traps in MOS high-temperature postirradiation annealing response
1/f Noise and radiation effects in MOS devices
Effect of radiation-induced charge on 1/f noise in MOS devices
Conference
·
Tue Nov 30 23:00:00 EST 1993
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6908033
1/f Noise and radiation effects in MOS devices
Journal Article
·
Mon Oct 31 23:00:00 EST 1994
· IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6795788
Effect of radiation-induced charge on 1/f noise in MOS devices
Conference
·
Wed Dec 05 23:00:00 EST 1990
· IEEE Transactions on Nuclear Science
·
OSTI ID:6762218