Fabrication and field emission study of gated diamondlike-carbon-coated silicon tips

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589330· OSTI ID:527853

Lee, S; Ju, B K; Lee, Y H ^[1]; Jeon, D ^[2]; Oh, M H ^[1]

---

1. Division of Electronics and Information Technology, Korea Institute of Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea)
2. Department of Physics, Myong Ji University, Yongin Kyunggi-Do, Seoul 449-728 (Korea)

We have fabricated a gated silicon field emitter array for which the silicon tips are coated with a diamondlike-carbon film (DLC). Silicon oxide disks were patterned on the silicon substrate, and the tips were formed using conventional dry etching. With the oxide caps covering the tips, the insulating layer, molybdenum gate film, and aluminum parting layer were deposited. At this stage the oxide caps were removed to expose the silicon tips and a DLC-carbon film was deposited onto the tips. {copyright} {ital 1997 American Vacuum Society.}

• OSTI ID: 527853
• Report Number(s): CONF-9607192--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 2 Vol. 15; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
CARBON
CATHODES
CHEMICAL VAPOR DEPOSITION
COATINGS
ELECTRODEPOSITION
ETCHING
FIELD EMISSION
MICROELECTRONICS
SILICON