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Phase 2 of the automated array assembly task of the Low-Cost Silicon Solar Array Project. Technical quarterly report No. 6, 1 October 1979-31 December 1979

Technical Report ·
DOI:https://doi.org/10.2172/5277125· OSTI ID:5277125
The ion implantation, metallization, and plasma etching processes are highlighted. Replacement of the hydrocarbon vacuum pump oils in the ion implanter with perfluorinated polyether pump oils has decreased, but not eliminated the formation of a carbonaceous surface layer on implanted wafers. Simulated unanalyzed beam ion implantation of boron for p-on-n cell fabrication has shown preliminary favorable results, showing better performance than control analyzed beam boron implants. An ion milling machine was adapted for true unanalyzed beam implants. The results show that high quality solar cells can be made with a high current unanalyzed ion beam. A new plasma etching unit has been obtained for patterning experiments. Preliminary experiments have been run. A polymerization effect of reactant gases has been observed, presenting a control problem. Changes in mask materials and gas compositions have been shown to eliminate this problem with the plasma patterning process. A re-evaluation of electroless nickel plating bath compositions has led to a new bath which gives successful plating without the formation of an oxide layer on the silicon surface observed with the previous baths. Low stress copper layers have been electroplated without the formation of an oxide layer on the silicon surface observed with the previous baths. Low stress copper layers have been electroplated over electroless nickel. The layers show suitable properties for solar cells. Cells have now been fabricated and heat treated with nickel-copper metallization. Nickel is shown to be a suitable barrier to copper diffusion into silicon.
Research Organization:
Motorola, Inc., Phoenix, AZ (USA). Semiconductor Group
DOE Contract Number:
NAS-7-100-954847
OSTI ID:
5277125
Report Number(s):
DOE/JPL/954847-80/7
Country of Publication:
United States
Language:
English