{ital Ex situ} ellipsometry characterization of excimer laser annealed amorphous silicon thin films grown by low pressure chemical vapor deposition
- Center for Solid State Electronics Research and Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States)
- Motorola, Phoenix Corporate Research Laboratory, Tempe, Arizona 85284 (United States)
- XMR Inc., Fremont, California 94538 (United States)
- Lawrence Livermore National Laboratory, L-271, Livermore, California 94551 (United States)
Spectroscopic ellipsometry was used to monitor excimer laser annealed thin ({approximately}100nm) amorphous silicon (a-Si) films grown on quartz substrates by low pressure chemical vapor deposition (LPCVD). The peak position of the imaginary part of the complex dielectric function {epsilon}{sub 2} was used to determine the degree of crystallization of the a-Si. The amplitude of {epsilon}{sub 2} at the Si E{sub 1} transition energy is found to be a good indicator of the polycrystalline silicon (poly-Si) grain size after laser annealing with good correlation between {ital ex situ} ellipsometric data and poly-Si grain sizes being observed. Spectroscopic ellipsometry provides a contactless, nondestructive, and simple technique for monitoring laser annealing both {ital in situ} during the annealing process or {ital ex situ} after annealing. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 526846
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 3; Other Information: PBD: Jul 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Morphology, microstructure, and doping behaviour: A comparison between different deposition methods for poly-Si/SiOx passivating contacts
Time-resolved ellipsometry measurements of the optical properties of silicon during pulsed excimer laser irradiation