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Time-resolved ellipsometry measurements of the optical properties of silicon during pulsed excimer laser irradiation

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.96014· OSTI ID:5336170
A technique has been developed for continuously carrying out time-resolved ellipsometric measurements on the nanosecond timescale. Using this technique, the optical properties of silicon have been measured during and immediately after pulsed excimer (KrF, lambda = 248 nm) laser irradiation. From these data the optical functions of liquid silicon at lambda = 632.8 nm have been determined to be n = 3.8 and k = 5.2 +- 0.1, in minor disagreement with the results of Shvarev, Baum, and Gel'd (High Temp. 15, 548 (1977)). The surface temperature before and after melting was also continuously determined by comparing these results with elevated constant-temperature measurements of the optical functions. The results demonstrate that time-resolved ellipsometry is a powerful technique for examining changes in optical properties on the nanosecond timescale.
Research Organization:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
DOE Contract Number:
AC05-84OR21400
OSTI ID:
5336170
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:7; ISSN APPLA
Country of Publication:
United States
Language:
English