Time-resolved ellipsometry and reflectivity measurements of the optical properties of silicon during pulsed excimer laser irradiation

Journal Article · Tue Jan 01 04:00:00 EST 1985 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:6947327

Jellison, Jr, G E; Lowndes, D H

Several advances in time-resolved optical measurement techniques have been made, which allow a more detailed determination of the optical properties of silicon immediately before, during, and after pulsed laser irradiation. It is now possible to follow in detail the time-resolved reflectivity signal near the melting threshold; measurements indicate that melting occurs in a spatially inhomogeneous way. The use of time-resolved ellipsometry allowed the authors to accurately measure the optical properties of the high reflectivity (molten) phase, and of the hot, solid silicon before and after the laser pulse. They obtain n = 3.8, k = 5.2 (+/-0.1) at lambda = 632.8 nm for the high reflectivity phase, in minor disagreement with the published values of Shvarev et al. for liquid silicon. Before and after the high reflectivity phase, the time-resolved ellipsometry measurements are entirely consistent with the known optical properties of crystalline silicon at temperatures up to its melting point. 10 references, 3 figures.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6947327
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 35; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360605* -- Materials-- Radiation Effects
DATA
ELECTROMAGNETIC RADIATION
ELEMENTS
ELLIPSOMETRY
EXPERIMENTAL DATA
INFORMATION
LASER RADIATION
MEASURING METHODS
MELTING
NUMERICAL DATA
OPTICAL PROPERTIES
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
REFLECTIVITY
SEMIMETALS
SILICON
SURFACE PROPERTIES
TIME DEPENDENCE