Morphology, microstructure, and doping behaviour: A comparison between different deposition methods for poly-Si/SiOx passivating contacts

Truong, Thien N.; Yan, Di; Nguyen, Cam‐Phu T.; Kho, Teng; Guthrey, Harvey; Seidel, Jan; Al‐Jassim, Mowafak; Cuevas, Andres; Macdonald, Daniel; Nguyen, Hieu T.

doi:10.1002/pip.3411

Morphology, microstructure, and doping behaviour: A comparison between different deposition methods for poly-Si/SiO_x passivating contacts

Journal Article · Thu Mar 04 00:00:00 UTC 2021 · Progress in Photovoltaics

DOI:https://doi.org/10.1002/pip.3411· OSTI ID:1774859

^[1]; Yan, Di ^[2]; Nguyen, Cam‐Phu T. ^[3]; Kho, Teng ^[1]; ^[4]; Seidel, Jan ^[3]; Al‐Jassim, Mowafak ^[4]; Cuevas, Andres ^[1]; Macdonald, Daniel ^[1]; ^[1]

Australian National Univ., Canberra, ACT (Australia)
Univ. of Melbourne, VIC (Australia)
Univ. of New South Wales, Sydney, NSW (Australia)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

In this work, we study how crystallographic structures, optoelectronic properties, and nanoscale surface morphologies of ex situ phosphorus-doped polycrystalline silicon (poly-Si)/SiO_x passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour deposition [PECVD], and low-pressure chemical vapour deposition [LPCVD]), are investigated and compared. Across all these deposition technologies, we noted the same trend: higher diffusion temperatures yield films that are more crystalline but that have rougher surface morphologies due to bigger surface crystal grains. Also, the recrystallization process of the as-deposited Si films starts from the SiO_x interface, rather than from the film surface and bulk. However, there are some distinct differences among these technologies. First, the LPCVD method yields the lowest deposition rate, roughest surfaces, and smallest degree of crystallinity on finished poly-Si films. In contrast, the PECVD method has the highest deposition rate and smoothest surfaces for both as-deposited Si and annealed poly-Si films. Second, as-deposited sputtered and PECVD Si films contain only an amorphous phase, whereas as-deposited LPCVD films already has some crystalline phase. Third, the LPCVD phosphorus in-diffusion into the substrate depends strongly on the initial film thickness, whereas for the other two methods, it is weakly dependent on thickness. Finally, the passivation quality of every poly-Si film type has different responses to the film thickness and diffusion temperature, suggesting that the ex situ doping optimization should be performed independently.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: Australian Renewable Energy Agency (ARENA); USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1774859

Report Number(s):: NREL/JA-5K00-79634; MainId:35855; UUID:df90a4b9-b3c8-4d68-b769-9a6104cfde13; MainAdminID:21170

Journal Information:: Progress in Photovoltaics, Journal Name: Progress in Photovoltaics Journal Issue: 7 Vol. 29; ISSN 1062-7995

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

References (37)

Thin Film Analysis by X‐Ray Scattering Birkholz, Mario Wiley‐VCH Verlag GmbH & Co https://doi.org/10.1002/3527607595	book	January 2005
Intrinsic Silicon Buffer Layer Improves Hole‐Collecting Poly‐Si Passivating Contact Kang, Jingxuan; Liu, Wenzhu; Allen, Thomas Advanced Materials Interfaces, Vol. 7, Issue 13 https://doi.org/10.1002/admi.202000188	journal	May 2020
Tunnel oxide passivating electron contacts as full-area rear emitter of high-efficiency p-type silicon solar cells Richter, Armin; Benick, Jan; Müller, Ralph Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 8 https://doi.org/10.1002/pip.2960	journal	November 2017
26.1%‐efficient POLO‐IBC cells: Quantification of electrical and optical loss mechanisms Hollemann, Christina; Haase, Felix; Schäfer, Sören Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 11 https://doi.org/10.1002/pip.3098	journal	October 2018
Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W Chen, Yifeng; Chen, Daming; Liu, Chengfa Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 10 https://doi.org/10.1002/pip.3180	journal	July 2019
Implantation‐based passivating contacts for crystalline silicon front/rear contacted solar cells Limodio, Gianluca; Yang, Guangtao; De Groot, Yvar Progress in Photovoltaics: Research and Applications, Vol. 28, Issue 5 https://doi.org/10.1002/pip.3250	journal	January 2020
On the recombination behavior of p ⁺ -type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces: On the recombination behavior of p ⁺ -type polysilicon on oxide junctions Larionova, Yevgeniya; Turcu, Mircea; Reiter, Sina physica status solidi (a), Vol. 214, Issue 8 https://doi.org/10.1002/pssa.201700058	journal	May 2017
Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells: Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells Feldmann, Frank; Müller, Ralph; Reichel, Christian physica status solidi (RRL) - Rapid Research Letters, Vol. 08, Issue 09 https://doi.org/10.1002/pssr.201409312	journal	August 2014
Hydrogenation Mechanisms of Poly‐Si/SiO _x Passivating Contacts by Different Capping Layers Truong, Thien N.; Yan, Di; Chen, Wenhao Solar RRL, Vol. 4, Issue 3 https://doi.org/10.1002/solr.201900476	journal	November 2019
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics Feldmann, Frank; Bivour, Martin; Reichel, Christian Solar Energy Materials and Solar Cells, Vol. 120 https://doi.org/10.1016/j.solmat.2013.09.017	journal	January 2014
Tunnel oxide passivated contacts as an alternative to partial rear contacts Feldmann, Frank; Bivour, Martin; Reichel, Christian Solar Energy Materials and Solar Cells, Vol. 131 https://doi.org/10.1016/j.solmat.2014.06.015	journal	December 2014
Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy Nguyen, Hieu T.; Rougieux, Fiacre E.; Yan, Di Solar Energy Materials and Solar Cells, Vol. 145 https://doi.org/10.1016/j.solmat.2015.11.006	journal	February 2016
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells Stuckelberger, Josua; Nogay, Gizem; Wyss, Philippe Solar Energy Materials and Solar Cells, Vol. 158 https://doi.org/10.1016/j.solmat.2016.06.040	journal	December 2016
monoPoly™ cells: Large-area crystalline silicon solar cells with fire-through screen printed contact to doped polysilicon surfaces Duttagupta, Shubham; Nandakumar, Naomi; Padhamnath, Pradeep Solar Energy Materials and Solar Cells, Vol. 187 https://doi.org/10.1016/j.solmat.2018.05.059	journal	December 2018
Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells Haase, Felix; Hollemann, Christina; Schäfer, Sören Solar Energy Materials and Solar Cells, Vol. 186 https://doi.org/10.1016/j.solmat.2018.06.020	journal	November 2018
Phosphorus diffused LPCVD polysilicon passivated contacts with in-situ low pressure oxidation Fong, Kean Chern; Kho, Teng Choon; Liang, WenSheng Solar Energy Materials and Solar Cells, Vol. 186 https://doi.org/10.1016/j.solmat.2018.06.039	journal	November 2018
High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion Yan, Di; Phang, Sieu Pheng; Wan, Yimao Solar Energy Materials and Solar Cells, Vol. 193 https://doi.org/10.1016/j.solmat.2019.01.005	journal	May 2019
24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design Chen, Daming; Chen, Yifeng; Wang, Zigang Solar Energy Materials and Solar Cells, Vol. 206 https://doi.org/10.1016/j.solmat.2019.110258	journal	March 2020
Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts Chen, Wenhao; Truong, Thien N.; Nguyen, Hieu T. Solar Energy Materials and Solar Cells, Vol. 206 https://doi.org/10.1016/j.solmat.2019.110348	journal	March 2020
On the hydrogenation of Poly-Si passivating contacts by Al2O3 and SiN thin films van de Loo, Bas W. H.; Macco, Bart; Schnabel, Manuel Solar Energy Materials and Solar Cells, Vol. 215 https://doi.org/10.1016/j.solmat.2020.110592	journal	September 2020
Deposition pressure dependent structural and optoelectronic properties of ex-situ boron-doped poly-Si/SiOx passivating contacts based on sputtered silicon Truong, Thien N.; Yan, Di; Chen, Wenhao Solar Energy Materials and Solar Cells, Vol. 215 https://doi.org/10.1016/j.solmat.2020.110602	journal	September 2020
Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells Nguyen, Hieu T.; Liu, Anyao; Yan, Di ACS Applied Energy Materials, Vol. 1, Issue 11 https://doi.org/10.1021/acsaem.8b01561	journal	October 2018
Hydrogen-Assisted Defect Engineering of Doped Poly-Si Films for Passivating Contact Solar Cells Truong, Thien N.; Yan, Di; Samundsett, Christian ACS Applied Energy Materials, Vol. 2, Issue 12 https://doi.org/10.1021/acsaem.9b01771	journal	November 2019
Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe ACS Applied Materials & Interfaces, Vol. 8, Issue 51 https://doi.org/10.1021/acsami.6b12714	journal	December 2016
Hydrogenation of Phosphorus-Doped Polycrystalline Silicon Films for Passivating Contact Solar Cells Truong, Thien N.; Yan, Di; Samundsett, Christian ACS Applied Materials & Interfaces, Vol. 11, Issue 5 https://doi.org/10.1021/acsami.8b19989	journal	January 2019
In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min Li, Shenghao; Pomaska, Manuel; Hoß, Jan ACS Applied Materials & Interfaces, Vol. 11, Issue 33 https://doi.org/10.1021/acsami.9b10360	journal	July 2019
Formation and suppression of hydrogen blisters in tunnelling oxide passivating contact for crystalline silicon solar cells Choi, Sungjin; Kwon, Ohmin; Min, Kwan Hong Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-66801-4	journal	June 2020
Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells Reichel, Christian; Feldmann, Frank; Müller, Ralph Journal of Applied Physics, Vol. 118, Issue 20 https://doi.org/10.1063/1.4936223	journal	November 2015
Hydrogen passivation of poly-Si/SiO _x contacts for Si solar cells using Al ₂ O ₃ studied with deuterium Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William Applied Physics Letters, Vol. 112, Issue 20 https://doi.org/10.1063/1.5031118	journal	May 2018
23% efficient p-type crystalline silicon solar cells with hole-selective passivating contacts based on physical vapor deposition of doped silicon films Yan, Di; Cuevas, Andres; Phang, Sieu Pheng Applied Physics Letters, Vol. 113, Issue 6 https://doi.org/10.1063/1.5037610	journal	August 2018
Poly-Si/SiO _x /c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition Li, Shenghao; Pomaska, Manuel; Hoß, Jan Applied Physics Letters, Vol. 114, Issue 15 https://doi.org/10.1063/1.5089650	journal	April 2019
Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies Hermle, Martin; Feldmann, Frank; Bivour, Martin Applied Physics Reviews, Vol. 7, Issue 2 https://doi.org/10.1063/1.5139202	journal	June 2020
Photovoltaic technology and visions for the future Green, Martin A. Progress in Energy, Vol. 1, Issue 1 https://doi.org/10.1088/2516-1083/ab0fa8	journal	July 2019
Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells Romer, Udo; Peibst, Robby; Ohrdes, Tobias IEEE Journal of Photovoltaics, Vol. 5, Issue 2 https://doi.org/10.1109/JPHOTOV.2014.2382975	journal	March 2015
Junction Resistivity of Carrier-Selective Polysilicon on Oxide Junctions and Its Impact on Solar Cell Performance Rienacker, Michael; Bossmeyer, Marcel; Merkle, Agnes IEEE Journal of Photovoltaics, Vol. 7, Issue 1 https://doi.org/10.1109/JPHOTOV.2016.2614123	journal	January 2017
Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells Stuckelberger, Josua; Loper, Philipp; Ballif, Christophe IEEE Journal of Photovoltaics, Vol. 8, Issue 2 https://doi.org/10.1109/JPHOTOV.2017.2779871	journal	March 2018
Hydrogenation of polycrystalline silicon films for passivating contacts solar cells Truong, Thien; Yan, Di; Cuevas, Andres 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC40753.2019.8980647	conference	June 2019

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Morphology, microstructure, and doping behaviour: A comparison between different deposition methods for poly-Si/SiOx passivating contacts

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Morphology, microstructure, and doping behaviour: A comparison between different deposition methods for poly-Si/SiO_x passivating contacts