Surface roughness estimation of MBE grown CdTe/GaAs(211)B by ex-situ spectroscopic ellipsometry
- Department of Material Science and Engineering, Izmir Institute of Technology, Izmir 35430 (Turkey)
- Department of Physics, Izmir Institute of Technology, Izmir 35430 (Turkey)
Spectroscopic ellipsometry (SE) ranging from 1.24 eV to 5.05 eV is used to obtain the film thickness and optical properties of high index (211) CdTe films. A three-layer optical model (oxide/CdTe/GaAs) was chosen for the ex-situ ellipsometric data analysis. Surface roughness cannot be determined by the optical model if oxide is included. We show that roughness can be accurately estimated, without any optical model, by utilizing the correlation between SE data (namely the imaginary part of the dielectric function, <ε{sub 2} > or phase angle, ψ) and atomic force microscopy (AFM) roughness. <ε{sub 2} > and ψ values at 3.31 eV, which corresponds to E{sub 1} critical transition energy of CdTe band structure, are chosen for the correlation since E{sub 1} gives higher resolution than the other critical transition energies. On the other hand, due to the anisotropic characteristic of (211) oriented CdTe surfaces, SE data (<ε{sub 2} > and ψ) shows varieties for different azimuthal angle measurements. For this reason, in order to estimate the surface roughness by considering these correlations, it is shown that SE measurements need to be taken at the same surface azimuthal angle. Estimating surface roughness in this manner is an accurate way to eliminate cumbersome surface roughness measurement by AFM.
- OSTI ID:
- 22611462
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 7 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ellipsometry of rough CdTe(211)B-Ge(211) surfaces grown by molecular beam epitaxy
Spectroscopic ellipsometry for analysis of polycrystalline thin-film photovoltaic devices and prediction of external quantum efficiency
Effects of surface microroughness in ellipsometry
Journal Article
·
Sun Oct 15 00:00:00 EDT 2006
· Journal of the Optical Society of America. Part B, Optical Physics
·
OSTI ID:20860861
Spectroscopic ellipsometry for analysis of polycrystalline thin-film photovoltaic devices and prediction of external quantum efficiency
Journal Article
·
Tue Jan 03 19:00:00 EST 2017
· Applied Surface Science
·
OSTI ID:1579801
Effects of surface microroughness in ellipsometry
Conference
·
Sat Nov 30 23:00:00 EST 1985
·
OSTI ID:6059605
Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
ATOMIC FORCE MICROSCOPY
CADMIUM TELLURIDES
CORRELATIONS
DATA ANALYSIS
DIELECTRIC MATERIALS
ELLIPSOMETRY
FILMS
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL MODELS
OPTICAL PROPERTIES
OXIDES
RESOLUTION
ROUGHNESS
SURFACES
THICKNESS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
ATOMIC FORCE MICROSCOPY
CADMIUM TELLURIDES
CORRELATIONS
DATA ANALYSIS
DIELECTRIC MATERIALS
ELLIPSOMETRY
FILMS
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL MODELS
OPTICAL PROPERTIES
OXIDES
RESOLUTION
ROUGHNESS
SURFACES
THICKNESS