Lattice engineered compliant substrate for defect-free heteroepitaxial growth

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118669· OSTI ID:526484

Ejeckam, F E; Lo, Y H; Subramanian, S ^[1]; Hou, H Q; Hammons, B E ^[2]

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1. School of Electrical Engineering, Cornell University, Ithaca, New York 14853 (United States)
2. Department of Semiconductor Materials, Sandia National Laboratories, MS 0603, Albuquerque, New Mexico 87185-0603 (United States)

Presented here is proof-of-principle that a thin single crystal semiconductor film{emdash}when twist-wafer bonded to a bulk single crystal substrate (of the same material){emdash}will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 {Angstrom} film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their {l_angle}110{r_angle} directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In{sub 0.35}Ga{sub 0.65}P({approximately}1{percent} strain) were grown with thicknesses of 3000 {Angstrom}, thirty times the Matthews{endash}Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 526484
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 70; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DISLOCATIONS
EPITAXY
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
LATTICE PARAMETERS
SUBSTRATES
THICKNESS
THIN FILMS
twist boundaries
wafer bonding