Phase-field simulations of thickness-dependent domain stability in PbTiO3 thin films
Journal Article
·
· Acta Materialia, 60(8):3296-3301
Phase-field approach is used to predict the thickness effect on the domain stability in ferroelectric thin films. The strain relaxation mechanism and critical thickness for dislocation formation from both Matthews-Blakeslee (MB) and People-Bean (PB) models are employed. Thickness - strain domain stability diagrams are obtained for PbTiO3 thin films under different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experiment measurements in PbTiO3 thin films grown on SrTiO3 and KTaO3 substrates.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1092020
- Report Number(s):
- PNNL-SA-90776
- Journal Information:
- Acta Materialia, 60(8):3296-3301, Journal Name: Acta Materialia, 60(8):3296-3301
- Country of Publication:
- United States
- Language:
- English
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