Ion-channeling study of the SiC/Si/SiO{sub 2}/Si interface
- Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
- Spire Corporation, Bedford, Massachusetts 01730 (United States)
Ion channeling has been used in a detailed study of 3C{endash}SiC films grown by chemical vapor deposition on a Si/SiO{sub 2}/Si substrate. For a 160-nm-thick {l_angle}100{r_angle}-oriented SiC film, the results show a minimum yield ({chi}{sub min}) of {approximately}28{percent} at the SiC{endash}Si interface, while a SiC film with a thickness of {approximately}2.4&hthinsp;{mu}m, grown under identical conditions, was almost defect free ({chi}{sub min}=5.3{percent}) in the surface region. Angular scans around the {l_angle}110{r_angle} axis revealed the existence of a superlattice structure at the SiC{endash}Si interface. The strain-induced angular shift was determined to be 0.16{degree}{plus_minus}0.05{degree}, indicating a kink between the SiC and Si layers along the inclined {l_angle}110{r_angle} axis. A modified model is suggested to interpret the experimental observations. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 353693
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 74; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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