Dislocation-free InSb grown on GaAs compliant universal substrates
- School of Electrical Engineering, Cornell University, Ithaca, New York 14853 (United States)
- Department of Semiconductor Materials, Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
An innovative compliant GaAs substrate was formed by wafer bonding a 30 {Angstrom} GaAs layer to a bulk GaAs crystal with a large angular misalignment inserted about their common normals. InSb epitaxial layers, which is about 15{percent} lattice mismatched to GaAs, have been grown on both compliant substrates and conventional GaAs substrates. Transmission electron microscopy studies showed that the InSb films grown on the compliant substrates have no measurable threading dislocations, whereas the InSb films on the conventional GaAs substrates exhibited dislocation densities as high as 10{sup 11}cm{sup {minus}2}. The observations made here suggest that the defect-free heteroepitaxial growth of exceedingly large lattice-mismatched crystals can be achieved with compliant universal substrates. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 527958
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 71; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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