Surface energy constraints for heteroepitaxial growth on compliant substrates: Morphology of GaN grown on Sc layers
- Naval Research Lab., Washington, DC (United States). Electronic Science and Technology Div.
- Sachs/Freeman Assoc. Inc., Landover, MD (United States)
An empirical relationship linking surface energy to bulk modulus is presented which suggests that the thermodynamic growth mode for heteroepitaxy on compliant substrates should be 3-D. As an example of this behavior, GaN growth on Sc is shown for various growth conditions. 2-D growth is obtained when the GaN is grown on top of a low temperature GaN nucleation layer. The results indicate that surface and interface energies, in addition to, lattice matching and thermal matching play an important role in determining the heteroepitaxial growth morphology of GaN. There appears to be no net reduction in the dislocation density for GaN films grown on the Sc layers, because the GaN film has to be grown on a low temperature nucleation layer.
- OSTI ID:
- 581047
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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