Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate

Journal Article · Thu Aug 15 00:00:00 EDT 2019 · Semiconductors

DOI:https://doi.org/10.1134/S1063782619080165· OSTI ID:22944887

Goloshchapov, D. L.; Zolotukhin, D. S.; Lenshin, A. S. ^[1]; Leiste, Harald; Rinke, Monika ^[2]

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1. Voronezh State University (Russian Federation)
2. Karlsruhe Nano Micro Facility (Germany)

The possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an A1N/Si buffer layer is demonstrated. The beneficial effect of the high-temperature nitridation of a silicon substrate before GaN growth on the crystal quality of the GaN/Si layers is shown. It is established that, to obtain two-dimensional GaN layers on Si(111), it is reasonable to use compliant por-Si substrates and low-temperature GaN seed layers with a 3D morphology synthesized by plasma-assisted molecular beam epitaxy at relatively low substrate temperatures under stoichiometric conditions and upon enrichment with nitrogen. In this case, a self-assembled array of GaN seed nanocolumns with a fairly uniform diameter distribution forms on the por-Si substrate surface. The basic GaN layers, in turn, should be grown at a high temperature under stoichiometric conditions upon enrichment with gallium, upon which the coalescence of nucleated GaN nanocolumns and growth of a continuous two-dimensional GaN layer are observed. The use of compliant Si substrates is a relevant approach for forming GaN-based semiconductor device heterostructures by plasma-assisted molecular beam epitaxy.

• OSTI ID: 22944887
• Journal Information: Semiconductors, Vol. 53, Issue 8; Other Information: Copyright (c) 2019 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COALESCENCE
CRYSTALS
GALLIUM
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NITRIDATION
NITROGEN
PLASMA
POROUS MATERIALS
SEMICONDUCTOR MATERIALS
SILICON
STOICHIOMETRY
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0400-1000 K
TWO-DIMENSIONAL SYSTEMS