Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In{sub x}Ga{sub 1 –x}N/Si(111) Heterostructures with a Nanocolumnar Film Morphology
- Voronezh State University (Russian Federation)
- St. Petersburg National Research Academic University, Russian Academy of Sciences (Russian Federation)
- Ioffe Institute (Russian Federation)
- Karlsruhe Nano Micro Facility (Germany)
Integrated heterostructures exhibiting a nanocolumnar morphology of the In{sub x}Ga{sub 1 –x}N film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of In{sub x}Ga{sub 1 –x}N nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the In{sub x}Ga{sub 1 –x}N layer. The growth of In{sub x}Ga{sub 1 –x}N nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is ~25% higher than the emission intensity for the film grown on the c-Si substrate.
- OSTI ID:
- 22945085
- Journal Information:
- Semiconductors (Woodbury, N.Y., Print), Vol. 53, Issue 1; Other Information: Copyright (c) 2019 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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