Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial In{sub x}Ga{sub 1 – x}N/Si(111) Heterostructures

Journal Article · Sat Dec 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S106378261813016X· OSTI ID:22945178

Goloshchapov, D. L.; Zolotukhin, D. S.; Kondrashin, M. A.; Lenshin, A. S.; Khudyakov, Yu. Yu. ^[1]; Mizerov, A. M. ^[2]; Arsentyev, I. N. ^[3]; Beltiukov, A. N. ^[4]; Leiste, Harald; Rinke, Monika ^[5]

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1. Voronezh State University (Russian Federation)
2. St. Petersburg National Research Academic University, Russian Academy of Sciences (Russian Federation)
3. Ioffe Institute (Russian Federation)
4. Physical Technical Institute, Ural Branch, Russian Academy of Sciences (Russian Federation)
5. Karlsruhe Nano Micro Facility (Germany)

Integrated heterostructures exhibiting nanocolumnar morphology of the In{sub x}Ga{sub 1 – x}N/Si(111) film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of structural and microscopic methods of analysis, it is shown that the growth of In{sub x}Ga{sub 1 – x}N nanocolumns on a nanoporous buffer layer offers a number of advantages over growth on c-Si. The por-Si substrate predetermines the preferential orientation of the growth of In{sub x}Ga{sub 1 – x}N nanocolumns closer to the Si(111) orientation direction and makes it possible to produce In{sub x}Ga{sub 1 – x}N nanocolumns with a higher degree of crystallographic uniformity and with a nanocolumn lateral size of ~40 nm unified over the entire surface. The growth of In{sub x}Ga{sub 1 – x}N nanocolumns on a por-Si layer yields a decrease in the strain components ε{sub xx} and ε{sub zz} and in the density of edge and screw dislocations compared to the corresponding parameters for In{sub x}Ga{sub 1 – x}N nanocolumns grown on c-Si. The In{sub x}Ga{sub 1 – x}N nanocolumnar layer fabricated on por-Si exhibits a 20% higher charge-carrier concentration compared to the layer grown on c-Si as well as a higher intensity of the photoluminescence quantum yield (+25%).

• OSTI ID: 22945178
• Journal Information: Semiconductors, Vol. 52, Issue 13; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUFFERS
CHARGE CARRIERS
CRYSTAL GROWTH
CRYSTALLOGRAPHY
GALLIUM NITRIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
MORPHOLOGY
NANOSTRUCTURES
NITROGEN
PHOTOLUMINESCENCE
PLASMA
SCREW DISLOCATIONS
SILICON
STRAINS
SUBSTRATES
THIN FILMS