Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A{sup III}N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy
- Voronezh State University (Russian Federation)
- St. Petersburg National Research Academic University, Russian Academy of Sciences (Russian Federation)
- Ioffe Institute (Russian Federation)
- Udmurt Federal Research Center, Ural Branch, Russian Academy of Sciences (Russian Federation)
The influence of using a buffer sublayer of nanoporous por-Si on the morphological, physical, and structural properties of nanocolumnar In{sub x}Ga{sub 1 –x}N structures fabricated by plasma-activated molecular-beam epitaxy on single-crystal Si(111) substrates is shown. Using a set of structural-spectroscopic analytical methods, the electronic structure of the grown heterostructures, morphology, and optical properties are investigated, and the interrelations between them are established. It is shown that the use of a por-Si sublayer makes it possible to attain a more uniform distribution of diameters of In{sub x}Ga{sub 1 –x}N nanocolumns and to increase the photoluminescence intensity of the latter.
- OSTI ID:
- 22944927
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 53; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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