Investigation of In/sub x/Ga/sub 1/. sqrt. /sub x/AsGaAs quantum wells grown by molecular-beam epitaxy

Journal Article · Wed Jun 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340369· OSTI ID:5253743

Jeong, J; Shahid, M A; Lee, J C; Schlesinger, T E; Milnes, A G

Photoluminescence (PL) and transmission electron microscopy have been used to study strained In/sub x/Ga/sub 1/..sqrt../sub x/AsGaAs (x = 0.24--0.28) quantum wells (QWs) grown by molecular-beam epitaxy. The three QWs grown without growth interruptions produce high intensity PL peaks of narrow full width at half-maximum (2.9 meV). On the other hand, the PL peaks in the QWs grown with 30-s interruptions are relatively broad, less symmetric, and show lower PL intensities, compared with the noninterrupted QWs. Our results show that high-quality strained In/sub x/Ga/sub 1/..sqrt../sub x/AsGaAs QWs can be grown without growth interruptions

• Research Organization: Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
• OSTI ID: 5253743
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DATA
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
MECHANICS
MOLECULAR BEAM EPITAXY
NUCLEAR POTENTIAL
NUMERICAL DATA
PNICTIDES
POTENTIALS
QUANTUM MECHANICS
SEMICONDUCTOR JUNCTIONS
SQUARE-WELL POTENTIAL