Photoluminescence properties of strained molecular-beam epitaxy Si{sub 1-x}Ge{sub x}/Si multiquantum wells
- National Research Council Canada, Ontario (Canada); and others
Si{sub 1-x}Ge{sub x}/Si multiquantum well (MQW) structures grown by molecular-beam epitaxy exhibit a broad, intense photoluminescence (PL) peak {approximately} 120 meV below the band gap energy and/or phonon-resolved, near-band gap PL, depending on the MQW strain and the growth conditions. The origins of these two PL types have been identified. For MQWs with thin alloy layers (<40-100 {Angstrom}), the SiGe PL at 2 K is dominated by boron bound-exciton annihilation, which yields phonon-resolved transitions. For thicker layers, the PL is dominated by a broad, intense peak due to exciton recombination at small (<{approximately}15 {Angstrom}) interstitial-type platelets that occur in densities up to {approximately} 10{sup 9} cm{sup {minus}2}/QW. Etching experiments revealed that within a given MQW the platelet density is lowest in the first grown well and progressively increases in subsequent wells with increasing strain energy density, indicating that platelet formation is strictly a morphological phenomenon. 17 refs., 4 figs.
- OSTI ID:
- 147038
- Report Number(s):
- CONF-9210296--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
Similar Records
Recombination of localized excitons in InGaN single and multiquantum well structures
Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGaAs