Recombination of localized excitons in InGaN single and multiquantum well structures

Book · Tue Dec 30 23:00:00 EST 1997

OSTI ID:581130

Chichibu, S ^[1]; Azuhata, T; Sota, T ^[2]; Nakamura, S ^[3]

---

1. Science Univ. of Tokyo, Noda, Chiba (Japan). Faculty of Science and Technology
2. Waseda Univ., Tokyo (Japan). Dept. of Electrical, Electronics, and Computer Engineering
3. Nichia Chemical Industries Ltd., Tokushima (Japan). Dept. of Research and Development

Spontaneous emission mechanisms of InGaN single quantum well (SQW) blue and green light emitting diodes (LEDs) and multiquantum well (MQW) laser diode (LD) structures were investigated. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well (QW). The transmission electron micrographs (TEM) indicated fluctuation of In molar fraction in the QWs. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.

• OSTI ID: 581130
• Report Number(s): CONF-961202--; ISBN 1-55899-353-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
EXCITONS
EXPERIMENTAL DATA
GALLIUM NITRIDES
INDIUM NITRIDES
LIGHT EMITTING DIODES
MICROSTRUCTURE
OPTICAL PROPERTIES
SEMICONDUCTOR LASERS