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Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGaAs

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2913513· OSTI ID:21137236
; ; ;  [1];  [2];  [3];  [4];  [5];  [6]
  1. Departamento de Fisica, Universidade Estadual de Londrina, 86051-970 Londrina, Parana (Brazil)
  2. Departamento de Fisica, Universidade Estadual do Centro-Oeste, 85040-080 Guarapuava, Parana (Brazil)
  3. Departamento de Fisica, Universidade Estadual do Oeste do Parana, 85903-000 Toledo, Parana (Brazil)
  4. Departamento de Fisica, Universidade Federal do Parana, 81531-990 Curitiba, Parana (Brazil)
  5. Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, 13560-970 Sao Carlos, Sao Paulo (Brazil)
  6. Physics Department, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
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The photoluminescence (PL) technique as a function of temperature and excitation intensity was used to study the optical properties of multiquantum wells (MQWs) of GaAs/Al{sub x}Ga{sub 1-x}As grown by molecular beam epitaxy on GaAs substrates oriented in the [100], [311]A, and [311]B directions. The asymmetry presented by the PL spectra of the MQWs with an apparent exponential tail in the lower-energy side and the unusual behavior of the PL peak energy versus temperature (blueshift) at low temperatures are explained by the exciton localization in the confinement potential fluctuations of the heterostructures. The PL peak energy dependence with temperature was fitted by the expression proposed by Paessler [Phys. Status Solidi B 200, 155 (1997)] by subtracting the term {sigma}{sub E}{sup 2}/k{sub B}T, which considers the presence of potential fluctuations. It can be verified from the PL line shape, the full width at half maximum of PL spectra, the {sigma}{sub E} values obtained from the adjustment of experimental points, and the blueshift maximum values that the samples grown in the [311]A/B directions have higher potential fluctuation amplitude than the sample grown in the [100] direction. This indicates a higher degree of the superficial corrugations for the MQWs grown in the [311] direction.

OSTI ID:
21137236
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ASYMMETRY
CRYSTAL GROWTH
ENERGY DEPENDENCE
EXCITONS
FLUCTUATIONS
GALLIUM ARSENIDES
GRAIN ORIENTATION
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POTENTIALS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPECTRA
SUBSTRATES
TEMPERATURE DEPENDENCE