Effects of rapid thermal annealing on quality of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As multiquantum wells grown on a compositionally graded InAlAs/InAlGaAs metamorphic buffer layer
- Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju, 500-712 (Korea, Republic of)
We report improvement in crystalline quality of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As multiquantum wells (MQWs) and compositionally graded InAlAs/InAlGaAs metamorphic buffer grown on GaAs by using postgrowth rapid thermal annealing (RTA). Dependence of optical and structural properties of the MQWs on RTA was investigated by using photoluminescence (PL) and triple-axis x-ray diffraction measurements. After the RTA, the PL intensity of the MQWs increased, while the linewidth decreased. Also, the triple-axis contour maps of the MQWs showed increase in peak intensity of epilayers as well as crystalline reformation indicated by narrower mosaic spread and restoration of epilayer tilt to the substrate orientation.
- OSTI ID:
- 20634577
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 26; Other Information: DOI: 10.1063/1.1833566; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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