Modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures grown on GaAs substrates using step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States)
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
We have grown modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures on GaAs substrates using compositionally step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers. Triple-axis x-ray diffraction measurements indicate nearly complete and isotropic strain relaxation in the buffer, lattice matching of the active layers with the top of the buffer, and no significant epilayer tilt. The temperature dependence and the photoresponse of the electron mobility suggest that transport in the heterostructures is limited principally by remote ionized-impurity scattering, with mobility values comparable to those of heterostructures grown lattice-matched to InP. {copyright} {ital 1996 American Vacuum Society}
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- DOE Contract Number:
- AC02-76CH00016; FG02-85ER45183
- OSTI ID:
- 288990
- Report Number(s):
- CONF-960117-; ISSN 0734-211X; TRN: 96:022491
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 4; Conference: 23. conference on the physics and chemistry semiconductor interfaces, La Jolla, CA (United States), 21-25 Jan 1996; Other Information: PBD: Jul 1996
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
INDIUM ARSENIDES
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
DOPED MATERIALS
HALL EFFECT
CARRIER MOBILITY
PHOTOCURRENTS
STRAINS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K