Modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures grown on GaAs substrates using step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers

Journal Article · Mon Jul 01 00:00:00 EDT 1996 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589060· OSTI ID:288990

Goldman, R S; Kavanagh, K L; Wieder, H H ^[1]; Ehrlich, S N ^[2]

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1. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States)
2. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

We have grown modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures on GaAs substrates using compositionally step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers. Triple-axis x-ray diffraction measurements indicate nearly complete and isotropic strain relaxation in the buffer, lattice matching of the active layers with the top of the buffer, and no significant epilayer tilt. The temperature dependence and the photoresponse of the electron mobility suggest that transport in the heterostructures is limited principally by remote ionized-impurity scattering, with mobility values comparable to those of heterostructures grown lattice-matched to InP. {copyright} {ital 1996 American Vacuum Society}

• Research Organization: Brookhaven National Laboratory
• DOE Contract Number: AC02-76CH00016; FG02-85ER45183
• OSTI ID: 288990
• Report Number(s): CONF-960117--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 14; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CARRIER MOBILITY
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
HALL EFFECT
HETEROJUNCTIONS
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOCURRENTS
STRAINS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K