The initial stages of growth of CuPt{sub B} ordered Ga{sub 0.52}In{sub 0.48}P/GaAs and Ga{sub 0.47}In{sub 0.53}As/InP
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Atomic force microscopy and Raman spectroscopy were used to investigate the development of the surface morphology and ordering of Ga{sub 0.52}In{sub 0.48}P and Ga{sub 0.47}In{sub 0.53}As. A series of lattice-matched highly ordered Ga{sub 0.52}In{sub 0.48}P/GaAs and Ga{sub 0.47}In{sub 0.53}As/InP samples ranging in thickness from 2 to 50 nm were grown by low-pressure metalorganic vapor phase epitaxy on (001) direct and vicinal substrates. Raman spectroscopy provided direct evidence of CuPt{sub B}-type ordering in layers as thin as 10 nm for Ga{sub 0.52}In{sub 0.48}P and 5 nm for Ga{sub 0.47}In{sub 0.53}As. We find that the morphology of both Ga{sub 0.52}In{sub 0.48}P and Ga{sub 0.47}In{sub 0.53}As on (001)6B substrates consists of ridges with heights ranging from 2 to 10 nm, which are aligned predominately along the [110] direction. For Ga{sub 0.52}In{sub 0.48}P growth on (001) direct substrates, ridges similar to those obtained on 6B vicinal substrates form with no preferential orientation, while Ga{sub 0.47}In{sub 0.53}As growth on (001) direct substrates proceeds by a combination of two-dimensional-island and step-flow growth. The average roughness of the GaInP layers is approximately twice that of GaInAs layers. These findings suggest it may be difficult to produce abrupt large-area heterointerfaces in structures containing ordered Ga{sub 0.52}In{sub 0.48}P and Ga{sub 0.47}In{sub 0.53}As alloys. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20215420
- Journal Information:
- Applied Physics Letters, Vol. 76, Issue 8; Other Information: PBD: 21 Feb 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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