Photoluminescence of Hg{sub 1-x}Cd{sub x}Te based heterostructures grown by molecular-beam epitaxy

Journal Article · Fri Jul 15 04:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611070153· OSTI ID:22004779

Bazhenov, N L; Ivanov-Omskii, V I ^[1]; Mikhailov, N N; Yakushev, M V; Sorochkin, A V; Remesnik, V G; Dvoretsky, S A; Varavin, V S; Sidorov, Yu G ^[2]

---

1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

Photoluminescence (PL) of Hg{sub 1-x}Cd{sub x}Te-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied. It is shown that a pronounced disruption of the long-range order in the crystal lattice is characteristic of structures of this kind. It is demonstrated that the observed disordering is mostly due to the nonequilibrium nature of MBE and can be partly eliminated by postgrowth thermal annealing. Low-temperature spectra of epitaxial layers and structures with wide potential wells are dominated by the recombination peak of an exciton localized in density-of-states tails; the energy of this peak is substantially lower than the energy gap. In quantum-well (QW) structures at low temperatures, the main PL peak is due to carrier recombination between QW levels and the energy of the emitted photon is strictly determined by the effective (with the QW levels taken into account) energy gap.

• OSTI ID: 22004779
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL LATTICES
ENERGY GAP
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PEAKS
PHOTOLUMINESCENCE
QUANTUM WELLS
RECOMBINATION
SPECTRA
SUBSTRATES
TEMPERATURE RANGE 0065-0273 K