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InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.99547· OSTI ID:5249676
Planar buried heterostructure InGaAsP multiple quantum well (MQW) lasers consisting of six InGaAsP (lambda/sub g/ = 1.34 ..mu..m at room temperature) wells and five InP barriers were prepared by low-pressure metalorganic chemical vapor deposition. The threshold current was 35 mA, and the differential quantum efficiency was 45% at an emission wavelength of 1.3 ..mu..m. In the temperature range from -35 to 30 /sup 0/C, the characteristic temperature was T/sub 0/ = 57 K. No significant improvement in T/sub 0/ was observed in these MQW lasers. However, stable single longitudinal mode operation could be obtained in a wide range of injection current without any mode changes. This effect was considered to be a result of gain narrowing of the MQW lasers.
Research Organization:
Opto-electronic Device Department, Matsushita Electronics Corporation, 1, Kohtariyakimachi, Nagaokakyo, Kyoto 617, Japan
OSTI ID:
5249676
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:25; ISSN APPLA
Country of Publication:
United States
Language:
English