InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition
Journal Article
·
· Appl. Phys. Lett.; (United States)
Planar buried heterostructure InGaAsP multiple quantum well (MQW) lasers consisting of six InGaAsP (lambda/sub g/ = 1.34 ..mu..m at room temperature) wells and five InP barriers were prepared by low-pressure metalorganic chemical vapor deposition. The threshold current was 35 mA, and the differential quantum efficiency was 45% at an emission wavelength of 1.3 ..mu..m. In the temperature range from -35 to 30 /sup 0/C, the characteristic temperature was T/sub 0/ = 57 K. No significant improvement in T/sub 0/ was observed in these MQW lasers. However, stable single longitudinal mode operation could be obtained in a wide range of injection current without any mode changes. This effect was considered to be a result of gain narrowing of the MQW lasers.
- Research Organization:
- Opto-electronic Device Department, Matsushita Electronics Corporation, 1, Kohtariyakimachi, Nagaokakyo, Kyoto 617, Japan
- OSTI ID:
- 5249676
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:25; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Journal Article
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· J. Appl. Phys.; (United States)
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OSTI ID:5250196
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASERS
MEDIUM TEMPERATURE
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT
VAPOR DEPOSITED COATINGS
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASERS
MEDIUM TEMPERATURE
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT
VAPOR DEPOSITED COATINGS