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Electrical and recombination characteristics of Cd/sub x/Hg/sub 1-x/Te irradiated with electrons at T=300/sup 0/ K

Journal Article · · Sov. Phys. - Semicond. (Engl. Transl.); (United States)
OSTI ID:5230181
Single crystals of n- and p-type Cd/sub x/Hg/sub 1-x/Te (x%=0.24--0.28) were irradiated at T=300/sup 0/K with 2.0 MeV electrons at doses of up to 2.2 x 10/sup 18/ cm/sup -2/. Studies were made of the electrical (R/sub H/,sigma, and R/sub H/sigma) and recombination (tau) parameters of samples subjected to irradiation and isochronous annealing in the temperature range 300--430/sup 0/ K. It was found that, whatever the initial type of conductivity, the saturation parameters of strongly irradiated Cd/sub x/Hg/sub 1-x/Te crystals corresponded to an n-type material with napprox. =5x10/sup 15/ cm/sup -3/ and R/sub H/sigmaapprox. = (2--4) x 10/sup 4/cm/sup 2/xV/sup -1/xsec/sup -1/ at 78/sup 0/ K. Electrons irradiation did not lead to the formation of additional recombination centers. An isochronous annealing stage was found at T=370--430/sup 0/ K. It is suggested that the observed changes in the properties of Cd/sub x/Hg/sub 1-x/Te under electron irradiation are due to the formation of vacancy clusters.
Research Organization:
V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk
OSTI ID:
5230181
Journal Information:
Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 11:8; ISSN SPSEA
Country of Publication:
United States
Language:
English